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- W2085655589 abstract "The origin of whiskers on GaAs films grown by the molecular beam epitaxy (MBE) technique was observed. One results from the inadvertent indium contamination on the films with random directions formed in isolated, either small or large conglomerates. The second is due to the indium climbing from the backside of the sample to the edge surface of the sample. These whiskers are all aligned along the (110) direction. The third is attributed to the gallium source and can be classified into two forms. One is provoked by slight gallium excess, and the other may be related to the gallium droplets similar to those of oval defect formation. The above two forms of whiskers are aligned along the same (110) direction. However, they do not have the same shape. The Ga/As composition ratio was investigated by Auger electron spectroscopy (AES), while their results are compared with the composition ratio obtained for the matrix GaAs films." @default.
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- W2085655589 date "1987-10-01" @default.
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- W2085655589 title "Observations on various genres of whisker defect on molecular beam epitaxial grown GaAs films" @default.
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- W2085655589 doi "https://doi.org/10.1016/s0039-6028(87)80555-1" @default.
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