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• W2085681925 abstract "We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho2Hf2O7 (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ∼20 and very low dielectric loss of ∼0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap Eg of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices." @default.
• W2085681925 created "2016-06-24" @default.
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• W2085681925 date "2015-03-16" @default.
• W2085681925 modified "2023-10-15" @default.
• W2085681925 title "Holmium hafnate: An emerging electronic device material" @default.
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• W2085681925 doi "https://doi.org/10.1063/1.4915503" @default.
• W2085681925 hasPublicationYear "2015" @default.
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