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• W2085684485 abstract "InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy. The temperature dependent electrical transport properties were carried out for InN/GaN heterostructure. The barrier height and the ideality factor of the Schottky diodes were found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height obtained by using TE and TFE models were 1.08 and 1.43 eV, respectively." @default.
• W2085684485 created "2016-06-24" @default.
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• W2085684485 date "2011-02-15" @default.
• W2085684485 modified "2023-10-01" @default.
• W2085684485 title "Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes" @default.
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• W2085684485 doi "https://doi.org/10.1063/1.3549685" @default.
• W2085684485 hasPublicationYear "2011" @default.
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