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- W2085751104 abstract "We expanded our analytical compact model for the drain current of undoped or lightly doped nanoscale FinFETs, in order to predict and decompose variability in the electrical characteristics of FinFETs. The model has been evaluated by comparison to TCAD simulated devices with predefined variability. Successful application to experimental data of FinFETs with fin width W <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>fin</sub> = 15 nm, gate length L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> =30 nm, equivalent gate oxide thickness t <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ox</sub> = 1.7 nm and fin height H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>fin</sub> = 65 nm, has attributed their behavior to geometrical variations (of L <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> , W <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>fin</sub> ) and variability in the metal gate work function (Φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>m</sub> ). Furthermore, variability of FinFETs having different number of fins (2-50) and fin's pitch (200-1000 nm) has been investigated." @default.
- W2085751104 created "2016-06-24" @default.
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- W2085751104 date "2014-05-01" @default.
- W2085751104 modified "2023-10-17" @default.
- W2085751104 title "Variability analysis — Prediction method for nanoscale triple gate FinFETs" @default.
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- W2085751104 doi "https://doi.org/10.1109/miel.2014.6842095" @default.
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