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- W2085753394 abstract "Enhanced asymmetric and non-linear characteristics of Ni–NiOx based MIM diode has been reported by the addition of a second insulator layer ZnO to form MIIM configuration. These properties are required for applications like energy-harvesting devices, terahertz electronics, macro electronics, etc. In this work, single insulator layer Ni–NiOx–Cr and double insulator Ni–NiOx–ZnO–Cr tunnel diodes were fabricated and their I–V characteristics were studied. A significant increase by one order of magnitude in asymmetry has been observed in case of bilayer NiOx/ZnO dielectric configuration at low voltages. The sensitivity of the NiOx and NiOx/ZnO dielectric configuration in MIM stack was 11 V−1 and 16 V−1. The improved performance of the bilayer insulator diode is due to the second insulator which enables resonant tunneling or step-tunneling. Resonant tunneling was found to be dominant through trap assisted tunneling in the NiOx/ZnO diode." @default.
- W2085753394 created "2016-06-24" @default.
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- W2085753394 date "2015-04-01" @default.
- W2085753394 modified "2023-09-27" @default.
- W2085753394 title "Fabrication and current–voltage characteristics of NiOx/ZnO based MIIM tunnel diode" @default.
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- W2085753394 doi "https://doi.org/10.1016/j.apsusc.2014.09.160" @default.
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