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• W2085809505 abstract "The changes of the structure and chemical states of photoluminescent p-type porous silicon (PS) caused by annealing in vacuum were investigated with atomic force microscopy and X-ray photoemission spectroscopy. The relative intensities of the silicon dioxide and suboxide peaks increased with the annealing temperature. The average size of the fine crystallites of the as-prepared samples was 5–10 nm and became 50–100 nm after being annealed at 550°C. The cause of photoluminescence quenching upon annealing is discussed." @default.
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• W2085809505 date "2002-02-01" @default.
• W2085809505 modified "2023-10-18" @default.
• W2085809505 title "THE EFFECTS OF ANNEALING OF A p-TYPE PHOTOLUMINESCENT POROUS SILICON IN VACUUM" @default.
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• W2085809505 doi "https://doi.org/10.1142/s0218625x02002166" @default.
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