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- W2085909144 abstract "The reaction of n-doped poly(4-dicyanomethylene-4H-cyclopenta[2,1-b;3,4-b‘]dithiophene) with O2 at negative potentials (e.g., −0.60 V) produces changes in the polymer's electrochemistry, electronic spectrum, and conductivity profile that indicate a lowering of its band gap. Cyclic voltammetry of O2-modified films shows increased currents in the voltage region corresponding to the band gap, between the original onsets of n and p doping. The onset of electronic absorption shifts from 0.8 eV to lower energies with increasing reaction time. In situ conductivity measurements show that the intrinsic conductivity increases by as much as a factor of 100 (to ∼10-6 S cm-1), corresponding to a reduction of the band gap to ∼0.2 eV. Thus by controlling the reaction time with O2 the band gap of the polymer can be tuned over the range of <0.2 to 0.8 eV. Raman spectra suggest that electrochemically driven substitution of the polymer with hydroxyl groups at the β-positions of the thiophene rings is responsible for the lowering of the band gap." @default.
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- W2085909144 date "1999-05-21" @default.
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- W2085909144 title "Oxygen-Modified Poly(4-dicyanomethylene-4<i>H</i>-cyclopenta[2,1-<i>b</i>;3,4-<i>b</i><i>‘</i>]dithiophene): A Tunable Low Band Gap Polymer" @default.
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- W2085909144 doi "https://doi.org/10.1021/cm9811038" @default.
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