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- W2086014987 abstract "InGaAsSbN quantum well diodes operating at 2 µm wavelength region were grown by molecular beam epitaxy (MBE) on InP substrates. The emission wavelength of the electroluminescence (EL) was as long as 2.43 µm at room temperature for the quantum well diode with 1.4% nitrogen. It was found from the temperature dependence of the EL spectrum that the introduction of nitrogen induced a marked reduction of temperature dependence of the band-gap energy of the InGaAsSbN layer." @default.
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- W2086014987 date "2004-03-26" @default.
- W2086014987 modified "2023-10-16" @default.
- W2086014987 title "2.43 µm Light Emission of InGaAsSbN Quantum Well Diodes Grown on InP Substrates" @default.
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- W2086014987 doi "https://doi.org/10.1143/jjap.43.l530" @default.
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