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- W2086144077 abstract "Abstract Ion implantation of Si is extensively employed in the fabrication of GaAs integrated circuits as an n-type dopant. We have investigated the electrical activation of Si in GaAs with high dose (1017–1019cm−3) room temperature Si implantations in semi-insulating GaAS. A co-implantation of As with Si was used to study the influence of local stoichiometry and substrate morphology on the electrical activation of Si. A van der Pauw method was employed for electrical characterization. Our results show that the previously reported saturation in the free electron concentration at 2 × 1018 cm−3 is not altered by co-implanted As. We compile our results with those of several publications to obtain the electrical activation after ~850°C annealing for implanted Si in the concentration range 1016–1020 Si cm−3. A quantitative description of the saturation effect is presented and discussed in terms of a simple saturation mechanism." @default.
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- W2086144077 date "1983-01-01" @default.
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- W2086144077 title "Saturation of Si activation at high doping levels in GaAs" @default.
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- W2086144077 doi "https://doi.org/10.1016/0022-3697(83)90038-0" @default.
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