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- W2086320358 abstract "In this paper, the integration of HfO2 onto SiC has been investigated via a number of different test structures. Capacitors consisting of HfO2 on Si, SiC, Si/SiC and SiO2/SiC have been fabricated and electrically tested. The new HfO2/Si/SiC capacitors provide the greatest breakdown electric field of 3.5 MV/cm, whilst leakage currents are minimised through the insertion of the narrow bandgap material. The Si layer, which is wafer bonded to the SiC, is proven to be stress free through Raman spectroscopy, whilst TEM and EDX prove that the interface is free of contaminants." @default.
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- W2086320358 date "2011-03-01" @default.
- W2086320358 modified "2023-09-27" @default.
- W2086320358 title "Characterisation of HfO<sub>2</sub>/Si/SiC MOS Capacitors" @default.
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- W2086320358 doi "https://doi.org/10.4028/www.scientific.net/msf.679-680.674" @default.
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