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• W2086367995 abstract "Ellipsometric and capacitance-voltage measurements were combined to detect both the AlSiO2 interlayer and the SiSiO2 interlayer for the Si/SiO2/Al system. The AlSiO2 interlayer was characterized by Auger electron spectroscopy (AES), combined with argon ion sputter profiling, of the Al/SiO2/Si structure and also of the remaining SiO2/Si structure after the aluminum had been chemically removed. An effective interlayer thickness is defined as the product of the interlayer thickness and the fractional change in the dielectric SiO2 constant. The results of these experiments indicate that the Alz.sbnd;SiO2 effective interlayer thickness has a range of 0.1–0.5 nm. The AES data can be readily interpreted if it is assumed that collision cascade mixing and recoil implantation occur as a consequence of sputter depth profiling through the aluminum." @default.
• W2086367995 created "2016-06-24" @default.
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• W2086367995 date "1981-08-01" @default.
• W2086367995 modified "2023-09-26" @default.
• W2086367995 title "Measurement of the interlayer between aluminum and silicon dioxide using ellipsometric, capacitance-voltage and auger electron spectroscopy techniques" @default.
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• W2086367995 doi "https://doi.org/10.1016/0040-6090(81)90442-9" @default.
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