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- W2086556150 abstract "We developed a highly sensitive displacement detection scheme for a GaAs-based electromechanical resonator using an integrated high electron mobility transistor (HEMT). Piezoelectric voltage generated by the vibration of the resonator is applied to the gate of the HEMT, resulting in the on-chip amplification of the signal voltage. This detection scheme achieves a displacement sensitivity of ∼9 pm·Hz -1/2 , which is one of the highest among on-chip purely electrical displacement detection schemes at room temperature." @default.
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- W2086556150 date "2011-06-01" @default.
- W2086556150 modified "2023-10-03" @default.
- W2086556150 title "Electromechanical Displacement Detection With an On-Chip High Electron Mobility Transistor Amplifier" @default.
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- W2086556150 doi "https://doi.org/10.1143/jjap.50.06gj01" @default.
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