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- W2086634973 abstract "The resistive switching behaviors of metal–oxide–metal nanoscale devices are a fascinating phenomenon for next generation nonvolatile memories. Herein for the first time we demonstrate nanoscale memristive devices made from a FeWO4 nanowires array. The device shows superior bipolar resistive switching behaviors. This study is useful for exploring the multifunctional materials and their applications in nonvolatile multistate memory devices." @default.
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- W2086634973 date "2014-06-01" @default.
- W2086634973 modified "2023-09-27" @default.
- W2086634973 title "Superior resistive switching behaviors of FeWO4 single-crystalline nanowires array" @default.
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- W2086634973 doi "https://doi.org/10.1016/j.cplett.2014.04.054" @default.
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