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- W2086636810 abstract "The effects of the CF4 plasma etching of thermally grown SiO2 films over Si on the Si-SiO2 interface have been studied; MOS capacitors were formed on the remaining SiO2 films in order to evaluate the properties of the Si-SiO2 interface after plasma etching. The etching was found to induce large densities of interface states. These interface states could be annealed by post-metallisation annealing at 450 degrees C in N2 for 10 min." @default.
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- W2086636810 date "1985-01-14" @default.
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- W2086636810 title "Effects of CF4plasma etching of SiO2on the properties of MOS structures formed on the remaining SiO2films" @default.
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- W2086636810 doi "https://doi.org/10.1088/0022-3727/18/1/001" @default.
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