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• W2086770673 abstract "We report the successful growth of InAsN onto GaAs substrates using nitrogen plasma source molecular beam epitaxy. We describe the spectral properties of InAsN alloys with N-content in the range 0 to 1% and photoluminescence emission in the mid-infrared spectral range. The photoluminescence emission of the sample containing 1% N reveals evidence of recombination from extended and localized states within the degenerate conduction band of InAsN. A comparison of GaAs and InAs based material shows little change in FWHM suggesting the change in substrate does not cause significant reduction in quality of the epilayers. Material grown is consistent with predictions from the band anti-crossing model (BAC model)." @default.
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• W2086770673 date "2009-09-17" @default.
• W2086770673 modified "2023-10-16" @default.
• W2086770673 title "Growth and characterisation of InAsN/GaAs dilute nitride semiconductor alloys for the mid-infrared spectral range" @default.
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• W2086770673 doi "https://doi.org/10.1117/12.829354" @default.
• W2086770673 hasPublicationYear "2009" @default.
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