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- W2086956772 abstract "Carrier transport in silicon-rich oxide (SRO) was studied under illumination using the standard current versus voltage and capacitance versus voltage measurements. Al/SRO/Si metal-oxide-semiconductor (MOS)-like structures were used, and SRO layers with different thickness and excess Si concentration were deposited by low-pressure chemical vapor deposition (CVD) technique. In reverse bias condition, two conduction regimes were observed. The photocurrent in low-voltage regime is limited by the transport mechanism of carriers; while in the high-voltage regime, it is limited by the density of photogenerated carriers. The Poole–Frenkel conduction mechanism was found to dominate the carrier transport in SRO under illumination. It was also demonstrated that high photosensitivity was achieved in this structure that is a potential visible optical sensor." @default.
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- W2086956772 date "2005-02-01" @default.
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- W2086956772 title "Study of the conduction properties of silicon-rich oxide under illumination" @default.
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- W2086956772 doi "https://doi.org/10.1016/j.tsf.2004.08.012" @default.
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