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- W2086972433 abstract "We have deposited epitaxial diamond films with very low angular spread on epitaxial β-phase silicon carbide layers on silicon (001) substrates. From x-ray rocking curve measurements, half-widths of the angular spread of the crystal orientation as low as 0.6° have been determined, which is the smallest value ever reported in heteroepitaxial diamond films and appears to be smaller than those of the β-phase silicon carbide underlayers. The film surface exhibits a roughness of about 100 nm with very few discernible boundaries due to misorientation. The optimization of the bias-enhanced nucleation process and the control of selective growth are the main factors for the improvement of the crystallinity." @default.
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- W2086972433 date "1997-04-15" @default.
- W2086972433 modified "2023-10-03" @default.
- W2086972433 title "Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide" @default.
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- W2086972433 doi "https://doi.org/10.1063/1.365047" @default.
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