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- W2087014934 abstract "Abstract We present a detailed study of the electrostatic field profile in a reverse-biased Schottky diode processed on an n-type or intrinsic amorphous semiconductor. Theoretical as well as experimental aspects are described. A simple model based on Shockley-Read-Hall statistics predicts the existence of two main regions in the reverse-biased Schottky barrier, in which the spatial variations in the field are linear and exponential. The existence of these regions and the associated transition from a linearly varying field to an exponentially varying field have been clearly confirmed by direct field-profile measurements using a charge collection technique recently developed by some of the present authors. Moreover, we show that it is possible to extract physical properties of the material from the field profile: the density of states (DOS) at the Fermi level and the integral of the DOS between about midgap and the Fermi level. These parameters have been measured with this method for a set of hydrogenated amorphous Si-Ge Schottky diodes with Ge content ranging from 0 to 24at.x. The results compare well with those derived from capacitance measurements." @default.
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- W2087014934 date "1991-09-01" @default.
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- W2087014934 title "Field-profile determination in amorphous Si-Ge alloy Schottky barriers" @default.
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- W2087014934 doi "https://doi.org/10.1080/13642819108207627" @default.
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