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• W2087022723 abstract "The effects of CF4 plasma treatment on Gd2O3 nanocrystal (NC) memory were investigated. For material analysis, secondary ion mass spectrometry and x-ray photoelectron spectroscopy analyses were performed to characterize the fluorine depth profile of the Gd2O3-NC film. In addition, an UV–visible spectrophotometer was used to obtain the Gd2O3 bandgap and analyzed to suggest the modified structure of the energy band. Moreover, the electrical properties, including the memory window, program/erase speed, charge retention, and endurance characteristics were significantly improved depending on the CF4 plasma treatment conditions. This can be explained by the physical model based on the built-in electric field in the Gd2O3 nanostructure. However, it was observed that too much CF4 plasma caused large surface roughness induced by the plasma damage, leading to characteristics degradation. It was concluded that with suitable CF4 plasma treatment, this Gd2O3-NC memory can be applied to future nonvolatile memory applications." @default.
• W2087022723 created "2016-06-24" @default.
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• W2087022723 date "2011-03-15" @default.
• W2087022723 modified "2023-09-26" @default.
• W2087022723 title "CF₄plasma treatment on nanostructure band engineered Gd₂O₃-nanocrystal nonvolatile memory" @default.
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• W2087022723 doi "https://doi.org/10.1063/1.3556761" @default.
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