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- W2087024410 abstract "A new MOS technology with the following advantages has been investigated: TiSi 2 is formed by being self-aligned to source and drain regions by silicidation; and TiN is formed by self-aligned to contact regions by direct nitridation. TiSi 2 was prepared by two-step annealing to only form silicide on the diffused layers. TiN was formed by direct nitridation of TiSi 2 in N 2 at a temperature higher than 900 °C. The TiN formed using this method was found to be an effective diffusion barrier between Al and Si for annealing at up to 500 °C for 1 hour. PSG-cap annealing provided excellent p-n junction characteristics with a silicide layer of 4 Ω/□ even after annealing at 950 °C for 30 min. Characteristics of devices fabricated by this new technology were demonstrated." @default.
- W2087024410 created "2016-06-24" @default.
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- W2087024410 date "1985-01-01" @default.
- W2087024410 modified "2023-09-26" @default.
- W2087024410 title "Novel submicron MOS devices by self-aligned nitridation of silicide (Sanicide)" @default.
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- W2087024410 doi "https://doi.org/10.1109/iedm.1985.190932" @default.
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