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• W2087036332 abstract "The growth and characterization of strained In0.25Ga0.75As-GaAs-Al0.20Ga0.80As quantum well lasers grown by metalorganic chemical vapor deposition using ethyldimethylindium (EDMIn) are described. A vapor pressure of 0.56 Torr at 11 °C has been extracted from the growth rates of thin InGaAs layers by transmission electron microscopy. Data on reproducibility in quantum well size are presented which indicate long-term stability in the EDMIn vapor pressure. Laser performance in samples grown with EDMIn is equivalent to, and in some cases better than, those grown with trimethylindium." @default.
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• W2087036332 date "1989-12-11" @default.
• W2087036332 modified "2023-09-24" @default.
• W2087036332 title "Ethyldimethylindium for the growth of InGaAs-GaAs strained-layer lasers by metalorganic chemical vapor deposition" @default.
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• W2087036332 doi "https://doi.org/10.1063/1.102003" @default.
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