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• W2087075332 abstract "Indium phosphide (InP) nanowires were grown by metal organic chemical vapor deposition on hydrogenated silicon (Si:H) surfaces prepared on various non-single crystal substrates. Structural and chemical properties of the nanowires were characterized by scanning electron microscopy, energy dispersive spectroscopy, and X-ray diffraction, elucidating the effect of varying the non-single crystal substrate on nanowire growth. A technique for growing InP nanowires on various non-single crystal substrates, including metals and dielectrics was demonstrated." @default.
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• W2087075332 date "2011-01-01" @default.
• W2087075332 modified "2023-10-09" @default.
• W2087075332 title "Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layer" @default.
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• W2087075332 doi "https://doi.org/10.1016/j.jcrysgro.2010.08.050" @default.
• W2087075332 hasPublicationYear "2011" @default.
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