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• W2087130128 abstract "Charge trapping memory structures with Al2O3 dielectrics as a trapping dielectric are investigated in a metal–Al2O3–oxide–silicon configuration with a metal gate of high work function. The devices show very good write/erase characteristics, endurance, retention and disturb behaviour. At elevated temperature, devices with an Al2O3 trapping layer are found to have better retention properties than devices with a silicon nitride trapping layer." @default.
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• W2087130128 date "2005-05-01" @default.
• W2087130128 modified "2023-09-30" @default.
• W2087130128 title "Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications" @default.
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• W2087130128 doi "https://doi.org/10.1016/j.sse.2004.09.003" @default.
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