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- W2087218054 abstract "By eliminating normal fabrication processes, we preserve the bulk insulating state of calcium-doped Bi${}_{2}$Se${}_{3}$ single crystals in suspended nanodevices, as indicated by the activated temperature dependence of the resistivity at low temperatures. We perform low-energy electron beam irradiation ($<16$ keV) and electrostatic gating to control the carrier density and therefore the Fermi level position in the nanodevices. In slightly $p$-doped Bi${}_{2ensuremath{-}x}$Ca${}_{x}$Se${}_{3}$ devices, continuous tuning of the Fermi level from the bulk valence band to the band gap reveals an enhancement ($>$a factor of 10) in the field-effect mobility, which suggests suppressed backscattering expected for the Dirac fermion surface states in the gap of topological insulators." @default.
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- W2087218054 date "2012-05-09" @default.
- W2087218054 modified "2023-10-06" @default.
- W2087218054 title "Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>Se<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:msub><mml:mrow /><mml:mn>3</mml:mn></mml:msub></mml:math>" @default.
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- W2087218054 doi "https://doi.org/10.1103/physrevb.85.201402" @default.
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