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- W2087227659 abstract "InSb was deposited on GaAsSb lattice matched to InP matrices using gas-source molecular beam epitaxy to form self-assembled quantum dots (SAQDs). The InSb critical thickness of the two-dimensional to three-dimensional growth was determined to be about 1 monolayer (ML). The off-normal streak angle analysis of the reflection high-energy electron diffraction patterns indicated that the facets of InSb SAQDs are of the {111} family. Transmission electron microscopy further confirmed that the InSb quantum dot has a truncated pyramid structure with {111} facets. The relationship between the dot density and indium deposition rates was analyzed using atomic force microscopy. The 80K photoluminescence spectrum of a multiple-layer InSb∕GaAsSb SAQD array with 1 ML nominal InSb thickness shows an emission peak wavelength of ∼1.72μm." @default.
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- W2087227659 date "2006-05-01" @default.
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- W2087227659 title "Formation and property of InSb self-assembled quantum dots on GaAsSb lattice matched to InP" @default.
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- W2087227659 doi "https://doi.org/10.1116/1.2190667" @default.
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