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• W2087352508 abstract "Wide bandgap hydrogenated amorphous silicon (a-Si:H) films have been prepared by the PECVD method at a low substrate temperature (80°C) controlling the incorporation of hydrogen (bonded with silicon) into the film. Optimizing the deposition parameters viz. hydrogen dilution, rf power, a-Si:H film with Eg ∼ 1.90 eV and σph ≥ 10−4 Scm−1 has been developed. This film exhibited better optoelectronic properties compared to a-SiC:H of similar optical gap. The quantum efficiency measurement on the Schottky barrier solar cell structure showed a definite enhancement of blue response. Surface reaction as well as structural relaxation under suitable deposition condition have been claimed to be responsible for the development of such material." @default.
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• W2087352508 date "1997-01-15" @default.
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• W2087352508 title "Widegap a-Si:H films prepared at low substrate temperature" @default.
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• W2087352508 doi "https://doi.org/10.1016/s0927-0248(96)00030-x" @default.
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