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- W2087404865 abstract "Using three-source molecular beam epitaxy, we demonstrate the direct heteroepitaxial growth of the direct semiconductor CuInS2 on silicon (001) substrates. The pretreatment of the silicon wafers includes a high-temperature exposure to the sulphur beam which leads to an ideal (1×1) sulphur-terminated surface defining the starting condition for successful epitaxy. All stages of the growth process were controlled in situ using Auger electron spectroscopy and low energy electron diffraction. Furthermore, the epitaxial layers were characterized by means of x-ray diffraction methods and by transmission electron microscopy. It is shown that the CuInS2 epilayers grow with a tetragonal structure which is clearly distinct from chalcopyrite." @default.
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- W2087404865 date "1998-05-25" @default.
- W2087404865 modified "2023-09-23" @default.
- W2087404865 title "Epitaxial growth of CuInS2 on sulphur terminated Si(001)" @default.
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- W2087404865 doi "https://doi.org/10.1063/1.121074" @default.
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