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- W2087408952 abstract "We describe the realization of buried-heterostructure strain-compensated quantum-cascade lasers that incorporate a very high degree of internal strain and are grown on InP substrates using gas-source molecular-beam epitaxy (GSMBE). The active region of the lasers contains AlAs layers up to 1.6 nm thick with 3.7% tensile strain; restricting any post-growth processing to temperatures below 600 °C to avoid relaxation. We demonstrate that buried-heterostructure devices can be realized by using GSMBE to over-grow the etched laser ridge with insulating InP:Fe at temperatures low enough to preserve the crystal quality of the strain-compensated active region. Two distinct growth techniques are described, both leading to successful device realization: selective regrowth at 550 °C and non-selective regrowth at 470 °C. The resulting buried-heterostructure lasers are compared to a reference laser from the same wafer, but with SiO2 insulation; all three have very similar threshold current densities, operational thermal stability, and waveguide losses." @default.
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- W2087408952 date "2013-09-01" @default.
- W2087408952 modified "2023-09-24" @default.
- W2087408952 title "Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxy" @default.
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- W2087408952 doi "https://doi.org/10.1016/j.jcrysgro.2012.12.079" @default.
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