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• W2087464517 abstract "We have fabricated ZnO source-gated thin film transistors (SGTFTs) with a buried TiW source Schottky barrier and a top gate contact. The ZnO active channel and thin high-κ HfO2 dielectric utilized are both grown by atomic layer deposition at temperatures less than 130 °C, and their material and electronic properties are characterized. These SGTFTs demonstrate enhancement-mode operation with a threshold voltage of 0.91 V, electron mobility of 3.9 cm2 V−1 s−1, and low subthreshold swing of 192 mV/decade. The devices also exhibit a unique combination of high breakdown voltages (>20 V) with low output conductances." @default.
• W2087464517 created "2016-06-24" @default.
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• W2087464517 date "2013-12-16" @default.
• W2087464517 modified "2023-09-24" @default.
• W2087464517 title "Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition" @default.
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• W2087464517 doi "https://doi.org/10.1063/1.4836955" @default.
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