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• W2087631705 startingPage "02BC04" @default.
• W2087631705 abstract "A novel tunneling field-effect transistor (TFET) with an L-shaped Ge source is investigated. The device comprises a Ge source that extends underneath a Si-channel region and separated from the drain by an insulator (SiO 2 ). By optimizing the overlap length of the extended source L OV and the Si body thickness T Si , the current due to vertical band-to-band tunneling (BTBT) of the Ge–Si hetero-junction could be increased significantly and is scalable with L OV . This leads to higher I ON and improved S . The SiO 2 also reduces OFF-state current I OFF by blocking leakage paths. With extensive simulation, the device physics and design guidelines of this novel structure are outlined." @default.
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• W2087631705 date "2012-02-01" @default.
• W2087631705 modified "2023-10-14" @default.
• W2087631705 title "Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor" @default.
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• W2087631705 doi "https://doi.org/10.1143/jjap.51.02bc04" @default.
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