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- W2087650450 abstract "A complete study of the defects created in the gate oxide and at the gate oxide/substrate interface of metal–oxide–semiconductor transistors with thick gate oxide (tox > 10 nm) during high electric field stress, and the mechanisms responsible for these defects creation have been given. In addition, some results of positive/negative high electric field stress with constant gate voltage of commercial n-channel power metal–oxide–semiconductor transistors with thick gate oxide of 100 nm, have been explained using this study." @default.
- W2087650450 created "2016-06-24" @default.
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- W2087650450 date "2007-02-01" @default.
- W2087650450 modified "2023-10-12" @default.
- W2087650450 title "Physico-chemical processes in metal–oxide–semiconductor transistors with thick gate oxide during high electric field stress" @default.
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- W2087650450 doi "https://doi.org/10.1016/j.jnoncrysol.2006.09.020" @default.
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