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- W2087743572 abstract "Pb 0.97 La 0.02 (Zr 0.87− x Sn x Ti 0.13 )O 3 (PLZST, x =0.27, 0.17, 0.07)) thin films with the compositions in ferroelectric rhombohedral (FE R ) region, near the morphotropic phase boundary (MPB), were deposited on the Pt‐electroded silicon (PtSi) substrates by the sol–gel process. The phase structure and surface morphology of PLZST thin films were analyzed by XRD and SEM, respectively. The dc electric field and temperature‐dependent dielectric properties of the PLZST thin films were investigated in detail. The results indicated that the dielectric constant, remnant polarization, and the Curie temperature ( T c ) of PLZST films were elevated with the decrease of Sn content. Hence, the larger dielectric tunability (τ) was obtained for PLZST thin films with x =0.07, and the maximum τ value was 78.1%." @default.
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- W2087743572 date "2009-01-01" @default.
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- W2087743572 title "Dielectric Properties of Pb<sub>0.97</sub>La<sub>0.02</sub>(Zr<sub>0.87−<i>x</i></sub>Sn<sub><i>x</i></sub>Ti<sub>0.13</sub>)O<sub>3</sub>Thin Films with Compositions near the Morphotropic Phase Boundary" @default.
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- W2087743572 doi "https://doi.org/10.1111/j.1551-2916.2008.02873.x" @default.
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