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- W2087863685 abstract "Device performance of uniformly-doped and delta-doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors are investigated with 2D numerical simulator, ATLAS/Silvaco. Simulation results demonstrates superior performance for the delta-doped structure. The advantages shown by delta-doped structure include better electron confinement and reduced parasitic conduction which are manifested as higher transconductance and improved drain current." @default.
- W2087863685 created "2016-06-24" @default.
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- W2087863685 date "2004-01-01" @default.
- W2087863685 modified "2023-10-14" @default.
- W2087863685 title "Comparison study of uniformly-doped and delta-doped Al/sub 0.22/Ga/sub 0.78/As/In/sub 0.22/Ga/sub 0.78/As pseudomorphic HEMTs" @default.
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- W2087863685 doi "https://doi.org/10.1109/smelec.2004.1620917" @default.
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