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- W2087906320 abstract "Capacitance-voltage ( C-V ) and conductance-voltage ( G-V ) measurements are dont at various temperatures on anodically oxidised n-GaAs MOS structures of 111 and orientations. The different behaviour of the C-V and G-V characteristics observed in these samples indicate that the interfacial region differs depending on the orientation." @default.
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- W2087906320 date "1987-10-01" @default.
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- W2087906320 title "Temperature dependence of C-V and G-V characteristics of native oxide-GaAs interfaces of <1̄1̄1̄> and <100> orientiations" @default.
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- W2087906320 doi "https://doi.org/10.1016/s0039-6028(87)80457-0" @default.
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