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- W2087959102 abstract "A fully depleted silicon-on-insulator (FD SOI) device having an ultrathin buried oxide (BOX) with a 45-nm fully silicided (FUSI) NiSi gate, and a hybrid SOI/bulk complementary metal oxide semiconductor (CMOS) integration process have been developed. The optimal threshold voltage (Vth) for low stand-by power (LSTP) applications in FUSI gate silicon on thin BOX (SOTB) MOSFETs was achieved while keeping a lightly doped channel. By using back-gate bias, we have demonstrated the optimization of device power and performance and a reduction in Vth variation after device fabrication. We have also shown that the characteristics of the integrated hybrid bulk transistor are comparable to those of conventional bulk transistors." @default.
- W2087959102 created "2016-06-24" @default.
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- W2087959102 date "2008-04-25" @default.
- W2087959102 modified "2023-10-03" @default.
- W2087959102 title "Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode" @default.
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- W2087959102 doi "https://doi.org/10.1143/jjap.47.2585" @default.
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