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• W2087981645 abstract "It has recently become clear that electron irradiation can recrystallize amorphous zones in semiconductors even at very low temperatures and even when the electron beam energy is so low that it cannot induce atomic displacements by ballistic collisions. We study the mechanism of this effect using classical molecular dynamics augmented with models describing the breaking of covalent bonds induced by electronic excitations. We show that the bond breaking allows a geometric rearrangement at the crystal-amorphous interface which can induce recrystallization in silicon without any thermal activation." @default.
• W2087981645 created "2016-06-24" @default.
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• W2087981645 date "2001-09-10" @default.
• W2087981645 modified "2023-10-16" @default.
• W2087981645 title "Mechanism of electron-irradiation-induced recrystallization in Si" @default.
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• W2087981645 doi "https://doi.org/10.1103/physrevb.64.125313" @default.
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