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- W2087989736 abstract "Progress in the development of narrow gap IV-VI-on-Si technology for IR sensor arrays is reviewed. Epitaxial Pb1-xSnxSe layers, about 4 micrometers thick, are grown by molecular beam epitaxy onto 3 inch Si(111) substrates. An intermediate CaF2 buffer layer of only 2 nm thickness was employed for compatibility reasons in most cases, direct growth without buffer layer, however, is possible. Material quality is improved by proper growth conditions and annealing. Threading dislocation densities as low as 106 cm-2 are obtained in samples with 3 X 3 cm2 size after proper anneal. It seems that glissile threading dislocations sweep out across the edge of the samples, and, in addition, such dislocations are able to react with sessile ones and transform them to glissile. IR photodiodes with much higher resistance area products can be obtained which approach the theoretical limit in a certain temperature range with such improve material quality. If the Pb/Pb1-xSnxSe IR Schottky-barrier sensors are described with a model which allows fluctuations of the barrier height, the saturation of the resistance-area products at low temperatures as well as ideality factors > 1 are explained as well.© (1997) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only." @default.
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- W2087989736 date "1997-08-26" @default.
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- W2087989736 title "<title>PbSnSe-on-Si: material and IR-device properties</title>" @default.
- W2087989736 doi "https://doi.org/10.1117/12.280428" @default.
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