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• W2088074518 startingPage "13880" @default.
• W2088074518 abstract "The existence of lateral-superlattice effects in narrow ${mathrm{In}}_{mathit{x}}$${mathrm{Ga}}_{1mathrm{ensuremath{-}}mathit{x}}$As/GaAs strained quantum wells grown on GaAs vicinal substrates is reported. The effects have been probed by photoluminescence excitation under magnetic field and compared to a theoretical model. Prior work indicates that strained epitaxial layers grown on vicinal surfaces may present a tilt angle between the substrate plane and the epilayer plane that depends on the lattice mismatch. This provokes strong lateral modulation of the potential induced by inhomogeneity of the built-in strain. Our results are consistent with strong lateral-superlattice effects." @default.
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• W2088074518 date "1993-05-15" @default.
• W2088074518 modified "2023-09-25" @default.
• W2088074518 title "Lateral-superlattice effects in very narrow strained semiconductor quantum wells grown on vicinal surfaces" @default.
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• W2088074518 doi "https://doi.org/10.1103/physrevb.47.13880" @default.
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