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• W2088141181 abstract "Two approaches to the growth of high-quality epitaxial Ge epilayers on (100) Si have been investigated. The first consisted of compositional-grading Si1−xGex layers and the use of strained-layer superlattices as dislocation filters. In general, this method produced unsatisfactory results, due to the difficulty in achieving good epitaxial growth in the Ge concentration interval 30%−70%. The second approach consisted of simply depositing pure Ge directly on (100) Si. Excellent epitaxial films with dislocation densities of less than 107 cm−2 and smooth morphology were obtained after optimization of the growth parameters. The initial growth temperature and post-growth annealing were found to be critical in obtaining good epitaxial material." @default.
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• W2088141181 date "1988-06-15" @default.
• W2088141181 modified "2023-10-09" @default.
• W2088141181 title "Growth and characterization of Si1−<i>x</i>Ge<i>x</i> and Ge epilayers on (100) Si" @default.
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• W2088141181 doi "https://doi.org/10.1063/1.340312" @default.
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