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- W2088175075 abstract "We report a detailed experimental and theoretical investigation of the effect of residual strain and strain relaxation, which manifests itself at the ${mathrm{S}mathrm{i}/mathrm{S}mathrm{i}mathrm{O}}_{2}$ interfaces in commercial silicon-on-insulator (SOI) wafers. SOI material is made of a single-crystal silicon overlayer (SOL) on top of an insulator (buried ${mathrm{SiO}}_{2}$ layer) sitting on a handle silicon wafer. Infrared reflectivity spectra show that the buried ${mathrm{SiO}}_{2}$ layer relaxes continuously when thinning the SOL. At the same time, the SOL surface roughness and the linewidth of optical phonons in Si near the ${mathrm{S}mathrm{i}/mathrm{S}mathrm{i}mathrm{O}}_{2}$ interface (probed by micro-Raman specroscopy) increase. In the as-delivered wafers, this comes from a slight expansion of Si on both sides of the buried ${mathrm{SiO}}_{2}$ layer, which, conversely, is compressed. Thinning the SOL modifies these initial equilibrium conditions. To get quantitative results, we have modeled all our Raman spectra using a theory of inhomogeneous shift and broadening for optical phonons, which takes into account the phonon interaction with the static strain fluctuations. From the variation of linewidth versus interface distance, we have found that the mean-squared strain continues to relax in the bulk of the wafer through a depth on the order of several $ensuremath{mu}mathrm{m}.$ We also show that the SOL surface roughness is related to strain fluctuations near the ${mathrm{S}mathrm{i}/mathrm{S}mathrm{i}mathrm{O}}_{2}$ interfaces." @default.
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- W2088175075 date "2000-12-29" @default.
- W2088175075 modified "2023-09-25" @default.
- W2088175075 title "Strain effect in silicon-on-insulator materials: Investigation with optical phonons" @default.
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- W2088175075 doi "https://doi.org/10.1103/physrevb.63.035309" @default.
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