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• W2088187022 abstract "The influence of carbon on optical transitions in SiGeC layers grown pseudomorphically on Si(100) substrate by rapid thermal chemical vapor deposition was investigated. We used spectroscopic ellipsometry to extract the pseudodielectric function for two sets of layers, with Ge-content of 8 and 18% and with C-content between 0 and 1.8%. From the numerical derivatives of the measured dielectric functions, we determined the critical point energies E1, E1+Δ1, and E2 as a function of the C-content. A weak linear dependence on the C-content was observed for all transitions. The experimental results could not be described either by considering solely the alloying effect, nor by linear addition of the strain-induced contributions. For a complete description of the observed energy shifts, a detailed band structure calculations and further experimental data are necessary." @default.
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• W2088187022 date "2000-03-01" @default.
• W2088187022 modified "2023-09-30" @default.
• W2088187022 title "Carbon dependence of the dielectric response function in epitaxial SiGeC layers grown on Si" @default.
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• W2088187022 doi "https://doi.org/10.1016/s0040-6090(99)00940-2" @default.
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