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- W2088293837 abstract "Abstract We studied the radiation tolerance of amorphous silicon oxycarbide (SiOC) alloys by combining ion irradiation, X-ray diffraction (XRD) and transmission electron microscopy (TEM). The amorphous SiOC alloys thin films were grown via co-sputtering from SiO2 and SiC (amorphous phase) targets either on a surface oxidized Si (100) substrate or on a sodium chloride substrate. By controlling the sputtering rate of each target, SiOC alloys with different compositions (1:2, 1:1, 2:1 ratios) were obtained. These alloys were irradiated by 100 keV He+ ions at both room temperature and 600 °C with damage levels ranging from 1 to 20 displacements per atom (dpa). TEM characterization shows no sign of crystallization, void formation or segregation in all irradiated samples. Our findings suggest that SiOC alloys are a class of promising radiation-tolerant materials." @default.
- W2088293837 created "2016-06-24" @default.
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- W2088293837 date "2015-06-01" @default.
- W2088293837 modified "2023-10-16" @default.
- W2088293837 title "Superior radiation tolerant materials: Amorphous silicon oxycarbide" @default.
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- W2088293837 doi "https://doi.org/10.1016/j.jnucmat.2015.02.039" @default.
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