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- W2088411426 abstract "Abstract The properties of silicon implanted with boron ions through thermal SiO2 films were studied using sheet resistivity measurements (corroborated by Hall data). Electrical properties for implants through 0.1 μm of SiO2, as compared to bare silicon, showed no unusual behavior as a function of anneal temperature. Sheet resistivity measurements as a function of SiO2 thickness for fixed ion energy, and as a function of energy for fixed oxide thickness were made after 525 and 925°C anneals, for boron doses of 1013, 1014 and 1015 ions/cm2. The profile of boron ions in SiO2 is near Gaussian for the energy range investigated and the stopping power is 0 to 20% lower than the theoretical value currently in the literature. Considerations for device manufacture are discussed in light of the results." @default.
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- W2088411426 date "1973-03-01" @default.
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- W2088411426 title "Properties of silicon implanted with boron ions through thermal silicon dioxide" @default.
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- W2088411426 doi "https://doi.org/10.1016/0038-1101(73)90001-4" @default.
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