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- W2088480899 abstract "GaAs(114)A surfaces were prepared using molecular beam epitaxy followed by annealing in As2 pressure as well as in ultrahigh vacuum. Based on low-energy electron diffraction, in situ scanning tunneling microscopy measurements, and ab initio first-principles electronic-structure calculations the surface reconstructions are determined. Under As-rich conditions GaAs(114)A develops a β2(2×1) and/or β2c(2×2) reconstruction which is analogous to the GaAs(001)β2(2×4) one. Although a low surface free energy (46 meV/A2 for As-rich conditions) is found for GaAs(114)Aβ2(2×1), it is split up into mesoscopic (113) and (115) facets. Also typical steps between 150 A wide terraces are observed along [110]. The stoichiometric GaAs(114)A surface is mesoscopically very flat and develops a α2(2×1) reconstruction of a low surface free energy of 53 meV/A2. The surface free energies for the α(2×1) and a newly introduced ω(2×1) variant are larger." @default.
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- W2088480899 date "2004-06-15" @default.
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- W2088480899 title "Structure and morphology of the As-rich and the stoichiometric GaAs(114)A surface" @default.
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- W2088480899 doi "https://doi.org/10.1063/1.1707212" @default.
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