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• W2088501162 abstract "A model for the low-temperature growth of native oxides on metals and semiconductors has been developed, taking into consideration the following elementary processes: (i) oxygen adsorption and desorption at the external oxide boundary; (ii) ionic flow in the growing oxide enhanced by either high-field migration or diffusion mechanisms; (iii) electronic tunnel current in the metal-oxide-adsorbed oxygen system; (iv) non-constancy of the voltage drop in the oxide. The kinetics of the growth of native oxides is shown to follow the Cabrera-Mott law in the initial stages of the oxidation, whereas the final stages reveal a significant deviation caused by the attenuation of tunnel current in the growing oxide film. The effects of the space charge on the moving ionic species are taken into consideration and shown to be the reason for the asymmetry of the physical properties of the native oxides." @default.
• W2088501162 created "2016-06-24" @default.
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• W2088501162 date "1992-02-14" @default.
• W2088501162 modified "2023-09-25" @default.
• W2088501162 title "Modelling of low-temperature oxidation of materials in gaseous environments" @default.
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• W2088501162 doi "https://doi.org/10.1088/0022-3727/25/2/019" @default.
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