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• W2088535644 abstract "The effect of nitrogen ambient pressure on growth of AlN films has been examined. High-quality epitaxial AlN films were grown on (0001) sapphire substrates using pulsed laser deposition from a sintered AlN target in low nitrogen ambient of 9.0×10−5 Torr. The orientation of AlN films can be controlled by nitrogen pressure. AlN films are c-axis oriented when grown in a nitrogen pressure of 9.0×10−5 to 4.0×10−2 Torr. Film orientation converted to a-axis as nitrogen pressure increased to 4.0×10−1 Torr. The X-ray rocking curves of the AlN (0002) peak became narrower with decreasing ambient pressure and yielded a full width at half-maximum of 0.078°. The N/Al composition ratio increases with nitrogen pressure." @default.
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• W2088535644 date "2000-04-01" @default.
• W2088535644 modified "2023-10-14" @default.
• W2088535644 title "Epitaxial aluminum nitride thin films grown by pulsed laser deposition in various nitrogen ambients" @default.
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• W2088535644 doi "https://doi.org/10.1016/s0925-9635(00)00216-8" @default.
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