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- W2088572272 abstract "PR-mask oxide wet etching process is generally applied for the formation of dual gate oxide (Gox) transistor (TR) with different thickness of gate oxide. Oxide residues, which could not be removed properly with conventional wet etching process by dHF was observed when PR rework process by strip with SPM and SC1 was preceded before oxide wet etching. The root cause on this oxide removal retardation issue was studied by XPS for the analysis of surface element, SEM for the observation of surface morphology and optical spectroscopy for the measurement of thickness of oxide. It was found that PR rework process is main factor for oxide residue, because no unetched oxide layer was observed after dHF etching if there was no PR rework. A model test showed that when NH 4 OH component was included during PR rework process, retardation of oxide etching was occurred. The abnormal high content of carbon ingredient on oxide surface after NH 4 OH treatment with SC1 or NH 4 OH only solution shows that some kind of blocking layer generated upon adsorbed NH 4 OH molecules on oxide surface may hinder oxide wet etching by HF. It is postulated that anionic molecules such as PAG (photoacid generator) or anionic surfactant arisen from PR developing process may be able to combine with NH 4 OH molecules, forming complex layer by electrostatic interaction. This assumption was clearly verified that no oxide residues was found after dHF etching if ozonated water (O 3 DIW) treatment was applied between PR developing and oxide wet etching step, since O3DIW can remove organic component with high efficiency, resulting the elimination of blocking layer for wet etching process." @default.
- W2088572272 created "2016-06-24" @default.
- W2088572272 creator A5004428573 @default.
- W2088572272 creator A5026533716 @default.
- W2088572272 creator A5045280708 @default.
- W2088572272 creator A5058220462 @default.
- W2088572272 creator A5079679300 @default.
- W2088572272 creator A5090332415 @default.
- W2088572272 date "2014-09-01" @default.
- W2088572272 modified "2023-09-24" @default.
- W2088572272 title "Retardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet Etching" @default.
- W2088572272 cites W2061544591 @default.
- W2088572272 cites W2100689394 @default.
- W2088572272 doi "https://doi.org/10.4028/www.scientific.net/ssp.219.24" @default.
- W2088572272 hasPublicationYear "2014" @default.
- W2088572272 type Work @default.
- W2088572272 sameAs 2088572272 @default.
- W2088572272 citedByCount "0" @default.
- W2088572272 crossrefType "journal-article" @default.
- W2088572272 hasAuthorship W2088572272A5004428573 @default.
- W2088572272 hasAuthorship W2088572272A5026533716 @default.
- W2088572272 hasAuthorship W2088572272A5045280708 @default.
- W2088572272 hasAuthorship W2088572272A5058220462 @default.
- W2088572272 hasAuthorship W2088572272A5079679300 @default.
- W2088572272 hasAuthorship W2088572272A5090332415 @default.
- W2088572272 hasConcept C100460472 @default.
- W2088572272 hasConcept C119599485 @default.
- W2088572272 hasConcept C127413603 @default.
- W2088572272 hasConcept C147789679 @default.
- W2088572272 hasConcept C165801399 @default.
- W2088572272 hasConcept C171250308 @default.
- W2088572272 hasConcept C172385210 @default.
- W2088572272 hasConcept C175708663 @default.
- W2088572272 hasConcept C178790620 @default.
- W2088572272 hasConcept C185592680 @default.
- W2088572272 hasConcept C191897082 @default.
- W2088572272 hasConcept C192562407 @default.
- W2088572272 hasConcept C2361726 @default.
- W2088572272 hasConcept C2776543023 @default.
- W2088572272 hasConcept C2779227376 @default.
- W2088572272 hasConcept C2779851234 @default.
- W2088572272 hasConcept C2780710336 @default.
- W2088572272 hasConcept C42360764 @default.
- W2088572272 hasConcept C52780932 @default.
- W2088572272 hasConceptScore W2088572272C100460472 @default.
- W2088572272 hasConceptScore W2088572272C119599485 @default.
- W2088572272 hasConceptScore W2088572272C127413603 @default.
- W2088572272 hasConceptScore W2088572272C147789679 @default.
- W2088572272 hasConceptScore W2088572272C165801399 @default.
- W2088572272 hasConceptScore W2088572272C171250308 @default.
- W2088572272 hasConceptScore W2088572272C172385210 @default.
- W2088572272 hasConceptScore W2088572272C175708663 @default.
- W2088572272 hasConceptScore W2088572272C178790620 @default.
- W2088572272 hasConceptScore W2088572272C185592680 @default.
- W2088572272 hasConceptScore W2088572272C191897082 @default.
- W2088572272 hasConceptScore W2088572272C192562407 @default.
- W2088572272 hasConceptScore W2088572272C2361726 @default.
- W2088572272 hasConceptScore W2088572272C2776543023 @default.
- W2088572272 hasConceptScore W2088572272C2779227376 @default.
- W2088572272 hasConceptScore W2088572272C2779851234 @default.
- W2088572272 hasConceptScore W2088572272C2780710336 @default.
- W2088572272 hasConceptScore W2088572272C42360764 @default.
- W2088572272 hasConceptScore W2088572272C52780932 @default.
- W2088572272 hasLocation W20885722721 @default.
- W2088572272 hasOpenAccess W2088572272 @default.
- W2088572272 hasPrimaryLocation W20885722721 @default.
- W2088572272 hasRelatedWork W1792539345 @default.
- W2088572272 hasRelatedWork W2014405699 @default.
- W2088572272 hasRelatedWork W2029301100 @default.
- W2088572272 hasRelatedWork W2039397739 @default.
- W2088572272 hasRelatedWork W2113527931 @default.
- W2088572272 hasRelatedWork W2116729965 @default.
- W2088572272 hasRelatedWork W2129363264 @default.
- W2088572272 hasRelatedWork W2534124860 @default.
- W2088572272 hasRelatedWork W2264763188 @default.
- W2088572272 hasRelatedWork W2777756901 @default.
- W2088572272 hasRelatedWork W2816097967 @default.
- W2088572272 hasRelatedWork W2818836304 @default.
- W2088572272 hasRelatedWork W2838031898 @default.
- W2088572272 hasRelatedWork W2841136153 @default.
- W2088572272 hasRelatedWork W2844571135 @default.
- W2088572272 hasRelatedWork W2853629329 @default.
- W2088572272 hasRelatedWork W2854980686 @default.
- W2088572272 hasRelatedWork W2861853447 @default.
- W2088572272 hasRelatedWork W2872469653 @default.
- W2088572272 hasRelatedWork W3179388375 @default.
- W2088572272 isParatext "false" @default.
- W2088572272 isRetracted "false" @default.
- W2088572272 magId "2088572272" @default.
- W2088572272 workType "article" @default.