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- W2088596968 abstract "The wet conditioning of silicon surfaces is the subject of intense investigation at present [l-5]. Various empirical procedures have been developed for preparing hydrogen-covered silicon surfaces [4,5]. In addition to electroless treatments involving dipping, we have proposed an electrochemical method in which the dark current transient during oxide etching is taken as a measure of surface conditioning [6-111. It is known that the shape of the dark current profile depends on the concentration of the ammonium fluoride solution [12] and its pH as reported earlier in electroless etching of silicon oxide structures [13]. So far we have investigated electrochemical conditioning by electron spectroscopy methods [7-111. In the present work we analyse the role of the pH on the resulting surface condition of Si(ll1) by combined electrochemistry-ultrahigh vacuum (UHV) surface analysis experiments. In addition to X-ray photoelectron spectroscopy (XPS) to determine surface coverages and oxidation states we use high resolution electron energy loss spectroscopy (HREELS) to examine the H termination and to identify the surface condition induced by the solution composition." @default.
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- W2088596968 date "1993-11-01" @default.
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- W2088596968 title "Influence of pH in electrolytic hydrogen termination of silicon" @default.
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- W2088596968 doi "https://doi.org/10.1016/0022-0728(93)80416-f" @default.
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