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- W2088658419 abstract "It has recently been predicted that in a suitable semiconductor the electron temperature may be reduced below the lattice temperature by an applied electric field. These calculations have either employed a three-term expansion of the electronic distribution function, or neglected all scattering other than that arising from polar optical modes. In the present paper the electron temperature is calculated as a function of electric field for both polar and non-polar semiconductors, including polar optical, deformation potential optical and acoustic, and intervalley scattering without expansion of the distribution function. Results are presented for n-type GaAs, InSb, Si and GaP. Finally, in discussing the approximations which remain in this theory, particular reference is made to p-type Ge, for which experimental data are available." @default.
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- W2088658419 date "1967-11-01" @default.
- W2088658419 modified "2023-09-26" @default.
- W2088658419 title "The electric field dependence of carrier temperature in semiconductors" @default.
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- W2088658419 doi "https://doi.org/10.1088/0370-1328/92/3/330" @default.
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