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- W2088668451 abstract "Abstract Transparent oxide semiconducting thin films based on mixed Ti-V oxides were prepared using a modified reactive magnetron sputtering method. Based on structural investigations performed with the help of x-ray diffraction and transmission electron microscopy analysis, two distinct regions in the prepared thin film have been observed: a nanocrystalline TiO2-V2O3-V2O5 mixed composition, and a thin layer consisting of amorphous phase and nanocystalline TiO2 phase deposited directly at the substrate. Optical measurements show excellent transmission in the visible spectral range of 73%, on average. Resistivity of the thin film was found at the order of 105 Ω cm at room temperature. The preparation of mixed Ti-V oxides provides a combination of high transparency and semiconducting properties." @default.
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- W2088668451 date "2013-01-01" @default.
- W2088668451 modified "2023-10-16" @default.
- W2088668451 title "Structural properties of transparent Ti-V oxide semiconductor thin films" @default.
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- W2088668451 doi "https://doi.org/10.2478/s11534-012-0150-8" @default.
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